A procedure used to produce substrates for Organic FET.

When tested with MEH-PPV (ADS100RE from American dyes) typical threshold values should be around 2V.

For more details write to Yair Ganot

No. Name Process Measurements
1 Pre oxidation cleaning (RCA): 1) H2SO4:H2O2 (3:1) @ 100C, 10 min.
DI water 14 M&# 937;.
2) HF:H2O (1:50) @ RT 15 sec.
DI water 14 M&# 937;.
3) NH4OH:H2O2:H2O (1:1:4) @ 80C, 10 min.
DI water 14 M&# 937;.
2 Dry oxidation: 1) 1000C, 30 min. (~25nm).
2) Oxide strip: BOE @ RT, 90 sec.
3) 950C, 250 min. (~80nm).
Oxide thickness. C-V.
3 Evaporation Ti:Au Evaporation Ti: 5nm, Au: 50nm.
4-7 These are structure specific steps that depend on the final shape and contact arrangement to be achieved.
8 Level 1:
FETs
photolithography
(Au:Ti)
1) Priming 120C, 10 min., hot plate.
2) P.R. 5214E: 5000 rpm, 60 sec.
3) Prebake: 90C, 15 min., Oven.
4) Exposure: 4.7 sec.
5) Developing: 60 sec.
6) Plasma descum: 200mTorr O2, 100W, 2 min.
7) Postbake: 90C, 20 min,Oven.
9 Etching Au:Ti 1) Au etch: I2:NH4I:H2O:C2H5OH
(0.5gr:2gr:10ml:15ml) @ RT, 45 sec.
DI water rinse: 2 min.
2) P.R. strip: DMF, 5 min. @ 140C, hot plate.
DI water rinse: 2 min.
3) Ti etch: NH4OH:H2O2:H2O (1:1:4), 60 sec.@ RT.
DI water rinse: 15 M&# 937;.
10 Final tests Visual inspection:
Vickers: Dimensions Au underetch
Nanospec final oxide width.
C-V: